s8377/s8378 series features l wide active area pixel pitch: 50 ? (s8377 series) 25 ? (s8378 series) pixel height: 0.5 mm l on-chip charge amplifier with excellent input/output characteristics l built-in timing generator allows operation with only start and clock pulse inputs l maximum operating clock frequency: 500 khz l spectral response range: 200 to 1000 nm l single 5 v power supply operation l 8-pin small package, s8377 and s8378 series are pin compatible. applications l image input devices l optical sensing devices image sensor cmos linear image sensor built-in timing generator and signal processing circuit; single 5 v supply operation s8377/s8378 series is a family of cmos linear image sensors designed for image input applications. these linear image sensors o perate from single 5 v supply with only start and clock pulse inputs, making them easy to use. the signal processing circuit has a charge a mplifier with excellent input/output characteristics and allows signal readout at 500 khz. the photodiodes of s8377 series have a height of 0.5 mm and are arrayed in a row at a spacing of 50 ?. the photodiodes of s837 8 series also have a height of 0.5 mm but are arrayed at a spacing of 25 ?. the photodiodes are available in 3 different pixel quantities fo r each series: 128 (s8377-128q), 256 (s8377-256q, S8378-256Q), 512 (s8377-512q, s8378-512q) and 1024 (s8378-1024q). quartz glass is the standard w indow material. 1 absolute maximum ratings parameter symbol value unit supply voltage vdd -0.3 to +10 v gain selection terminal voltage vg -0.3 to +10 v clock pulse voltage v (clk) -0.3 to +10 v start pulse voltage v (st) -0.3 to +10 v operating temperature * 1 topr -20 to +60 c storage temperature ts t g -20 to +80 c *1: no condensation shape specifications parameter s8377- 128q s8377- 256q s8377- 512q s8378- 256q s8378- 512q s8378- 1024q unit number of pixels 128 256 512 256 512 1024 - pixel pitch 50 25 m pixel height 0.5 mm package length 15.8 22.2 35.0 15.8 22.2 35.0 mm number of pins 8 8 - window material quartz quartz -
cmos linear image sensor s8377/s8378 series wavelength (nm) relative sensitivity (%) 200 400 0 40 20 (typ. ta=25 ?c) 100 80 60 1000 800 600 2 spectral response (typical example) kmpdb0213eb recommended terminal voltage parameter s y mbol min. typ. max. unit supply voltage vdd 4.75 5 5.25 v high gain 0 - 0.4 v gain selection terminal voltage low gain vg vdd-0.25 vdd vdd+0.25 v high vdd-0.25 vdd vdd+0.25 v clock pulse voltage low v ( clk ) 0-0.4v high vdd-0.25 vdd vdd+0.25 v start pulse voltage low v ( st ) 0 - 0.4 v electrical characteristics parameter s y mbol min. typ. max. unit clock pulse frequency * 2 f ( clk ) 0.1 - 500 khz output impedance * 3 zo - 1 - k ? power consumption p - 25 - mw *2: ta=25 c, vdd=5 v, v (clk)=v (st)=5 v, vg=5 v (low gain) *3: an increased current consumption at the video terminal rises the sensor chip temperature causing an increased dark current. connect a buffer amplifier for impedance conversion to the video terminal so that the current flowing to the video terminal is minimized. use a jfet or cmos input, high-impedance input op amp as the buffer amplifier. electrical and optical characteristics [ta=25 c, vdd=5 v, v (clk)=v (st)=5 v] s8377 series s8378 series parameter s y mbol min. typ. max. min. typ. max. unit spectral response range 200 to 1000 200 to 1000 nm peak sensitivity wavelength p - 500 - - 500 - nm high gain - 22 - - 22 - photo sensitivity low gain s -4.4- -4.4- v/ lx s dark current i d - 0.08 0.24 - 0.04 0.12 pa saturation charge qsat - 12.5 - - 6.3 - pc high gain - 1 - - 0.5 - feedback capacitance * 4 of charge amplifier low gain cf - 5 - - 2.5 - pf high gain - 8.0 24 - 8.0 24 dark out p ut volta g e * 5 low gain vd - 1.6 4.8 - 1.6 4.8 mv high gain 2.8 3.2 - 2.8 3.2 - saturation output voltage low gain vsat 2.1 2.5 - 2.1 2.5 - v high gain - 145 - - 145 - saturation exposure * 6 low gain esat - 570 - - 570 - m lx s - 0.1 (-128q) - - 0.2 (-256q) - - 0.15 (-256q) - - 0.3 (-512q) - low gain - 0.2 (-512q) - - 0.4 (-1024q) - - 0.4 (-128q) - - 0.9 (-256q) - - 0.5 (-256q) - - 1.3 (-512q) - readout noise high gain nr - 0.8 (-512q) - - 2.1 (-1024q) - mv rms photo response non-uniformity * 7 prnu -3 - +3 -3 - +3 % *4: vg=5 v (low gain), vg=0 v (high gain) *5: storage time ts=100 ms *6: measured with a tungsten lamp of 2856 k. *7: photo response non-uniformity is defined under the condition that the device is uniformly illuminated by light which is 50 % of the saturation exposure level as follows: prnu= ? x/x 100 (%) x: the average output of all pixels, ? x: difference between x and maximum or minimum output and x
cmos linear image sensor s8377/s8378 series timing chart kmpdc0149ea 3 parameter symbol min. typ. max. unit start pulse width tpw (st) 600 ns - 10 ms - start pulse rise and fall time tr (st), tf (st) 0 20 30 ns clock pulse width tpw (clk) 1000 ns - 5 ms - clock pulse rise and fall time tr (clk), tf (clk) 0 20 30 ns clock pulse-start pulse timing t (clk-st) 400 ns - 5 ms - video delay time 1 tvd1 200 300 400 ns video delay time 2 tvd2 50 150 250 ns storage time 1 st clk video st clk video eos 2 n-1 n tf (st) t (clk-st) tpw (clk) tvd1 tr (st) tr (clk) tf (clk) tvd2 tpw (st) the storage time is determined by the start pulse intervals. however, since the charge storage of each pixel is carried out between the signal readout of that pixel and the next signal readout of the same pixel, the start time of charge storage differs depending on each pixel. in addition, the next start pulse cannot be input until signal readout from all pixels is completed. vout
cmos linear image sensor s8377/s8378 series block diagram kmpdc0150ea pin connections pin no. symbol name of pin function 1 clk clock pulse pulse input to operate the shift register. the readout time (data rate) equals the clock pulse frequency. 2 st start pulse starts the shift register operation. the start pulse intervals determine the signal storage time. 3 vg gain selection voltage input of 5 v selects ? low gain ? and 0 v selects ? high gain ? 4 vdd supply voltage 5 v typ. 5 nc open 6 video video signal output. positive-going output from 1 v 7 eos end of scan negative-going signal output obtained at a timing following the last pixel scan. 8 vss ground 4 charge amp clamp circuit digital shift register address switch photodiodes timing generator 1 2 3 4 5 n n-1 clk 1 st 2 vdd 4 vss 8 eos 7 vg 3 video 6 clk st vg vdd 1 2 3 4 vss eos video nc 8 7 6 5 kmpdc0151ea
cmos linear image sensor s8377/s8378 series 5 dimensional outlines (unit: mm) kmpda0150ec s8377-128q, S8378-256Q s8377-256q, s8378-512q kmpda0151ec kmpda0152ec s8377-512q, s8378-1024q 0.51 7.62 2.54 3.0 active area 6.4 0.5 7.87 3.935 0.2 3.935 0.2 3.2 0.3 15.8 * optical distance from the outer surface of the quartz window to the chip surface 7.62 1.3 0.2 * 0.25 chip 5.0 0.5 3.0 7.87 3.935 0.2 3.935 0.2 active area 12.8 0.5 6.4 0.3 22.2 7.62 2.54 0.51 * optical distance from the outer surface of the quartz window to the chip surface 7.62 1.3 0.2 * 0.25 chip 5.0 0.5 3.0 7.87 3.935 0.2 3.935 0.2 active area 25.6 0.5 12.8 0.3 35.0 7.62 2.54 0.51 * optical distance from the outer surface of the quartz window to the chip surface 7.62 1.3 0.2 * 0.25 chip 5.0 0.5
cmos linear image sensor s8377/s8378 series hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184, www.hamamatsu.com u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 08152 -3750, fax: (49) 08152-2658 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, teleph one: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv ? gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8-509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39) 02-935-81-733, fax: (39) 02-935-81-741 information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?200 7 hamamatsu photonics k.k. cat. no. kmpd1066e05 feb. 2007 dn 6 handling precautions (1) electrostatic countermeasures although the cmos linear image sensor is protected against static electricity, proper electrostatic countermeasures must be provided to prevent device destruction by static electricity. for example, such measures include wearing non-static gloves and clothes, and grounding the work area and tools. (2) incident window if the incident window is contaminated or scratched, the output uniformity will deteriorate considerably, so care should be taken in handling the window. avoid touching it with bare hands. the window surface should be cleaned before using the device. if dry cloth or dry cotton swab is used to rub the window surface, static electricity may be generated, and therefore this practice should be avoided. use soft cloth, cotton swab or sof t paper moistened with ethyl alcohol to wipe off dirt and foreign matter on the window surface. (3) uv exposure the cmos linear image sensor is designed to suppress performance deterioration due to uv exposure. even so, avoid unnecessary uv exposure to the device. also, be careful not to allow uv light to strike the cemented portion between the ceramic base and the glass. (4) operating and storage environments always observe the rated temperature range when handling the device. operating or storing the device at an excessively high temperature and humidity may cause variations in performance characteristics and must be avoided.
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